Low-level NO gas sensing properties of Zn1-xSnxO nanostructure sensors under UV light irradiation at room temperature


Creative Commons License

Er I. K., Cagirtekin A. O., Corlu T., YILDIRIM M. A., ATEŞ A., Acar S.

BULLETIN OF MATERIALS SCIENCE, cilt.42, sa.1, 2019 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 42 Sayı: 1
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1007/s12034-018-1714-z
  • Dergi Adı: BULLETIN OF MATERIALS SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Erzincan Binali Yıldırım Üniversitesi Adresli: Evet

Özet

Zn1-xSnxO (x=0, 0.05, 0.10, 0.15, 0.20) nanostructures have been grown through the successive ionic layer adsorption and reaction method. The structural, morphological and compositional properties of the nanostructures have been characterized through X-ray diffraction, scanning electron microscope and energy dispersive X-ray analysis, respectively. The NO gas sensing properties of sensors to 20ppb have been systematically investigated in the dark and under UV light irradiation. A Zn0.90Sn0.10O sensor has exhibited the highest response for 20ppb NO gas compared with other sensors. The sensor response has increased from 1.9 to 43% depending on the UV light irradiation for the Zn0.90Sn0.10O sensor. Zn0.90Sn0.10O nanostructure can be used as a suitable gas sensor material for detection of low concentration levels of NO gas.