gamma-Irradiation-induced changes at the electrical characteristics of Sn/p-Si Schottky contacts

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Gullu O., Demir F., Cimilli F. E., Biber M.

VACUUM, cilt.82, sa.8, ss.789-793, 2008 (SCI-Expanded, Scopus)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 82 Sayı: 8
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.vacuum.2007.11.006
  • Dergi Adı: VACUUM
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.789-793
  • Anahtar Kelimeler: radiation effect, Schottky barrier diode, barrier inhomogeneity, I-V CHARACTERISTICS, BARRIER DIODES, ION-IMPLANTATION, RAY IRRADIATION, GAAS, INTERFACE, SILICON, DEFECTS, TEMPERATURE, HEIGHT
  • Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
  • Erzincan Binali Yıldırım Üniversitesi Adresli: Hayır

Özet

We studied electrical parameters of Sn/p-Si Schottky barrier diodes (SBDs) by using in situ current-voltage (I-V) and capacitance-voltage (C-V) measurements under gamma-irradiation at room temperature. The devices were held under zero bias during gamma-irradiation with dose rate 0.25 kGy/h, and the total dose range was 0-45 kGy. Irradiation results indicated that these devices may have applications as radiation sensors in order to detect the low-energy gamma radiation. (C) 2007 Elsevier Ltd. All rights reserved.