Influence of annealing on properties of SILAR deposited nickel oxide films

Tasdemirci T.

VACUUM, cilt.167, ss.189-194, 2019 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 167
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1016/j.vacuum.2019.05.047
  • Dergi Adı: VACUUM
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.189-194
  • Erzincan Binali Yıldırım Üniversitesi Adresli: Evet

Özet

Nickel Oxide (NiO) thin films have been grown by Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates at room temperature. Grown NiO thin films subsequently annealed from 200 degrees C to 400 degrees C for 0.5 h. The effect of annealing temperature on the structural, morfological, molecular and optical properties were analyzed. NiO thin films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), fouirer transform infrared spektrofotometre (FTIR) and UV-vis spectrophotometer respectively. The crystal and surface properties of NiO thin films developed with annealing temperature. The energy band gap values were reduced from 3.3 to 3.11 eV depending with annealing temperature.