Copper Oxide Thin Films Synthesized by SILAR: Role of Varying Annealing Temperature


ELECTRONIC MATERIALS LETTERS, 2020 (SCI İndekslerine Giren Dergi)


To coat CuO thin films on the glass surface, an easily controlled successive ionic layer absorption and reaction method was used. CuO thin films were grown at room temperature. The CuO thin films obtained were annealed for 30 min at 200, 300 and 400 degrees C. The changes caused by annealing temperature on nanostructured CuO thin films were studied. Structural, morphological, optical and molecular properties of annealed CuO thin films were investigated. For this analysis, X-ray diffraction, Scanning electron microscopy, Atomic force microscopy, RAMAN and Optical absorption spectroscopy (UV-Vis) and Fourier transform infrared spectroscopy devices were used. Graphic