Copper Oxide Thin Films Synthesized by SILAR: Role of Varying Annealing Temperature

CAYIR TASDEMIRCI T.

ELECTRONIC MATERIALS LETTERS, cilt.16, sa.3, ss.239-246, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 16 Sayı: 3
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1007/s13391-020-00205-4
  • Dergi Adı: ELECTRONIC MATERIALS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.239-246
  • Anahtar Kelimeler: Annealed, CuO thin films, Semiconductors, SILAR method
  • Erzincan Binali Yıldırım Üniversitesi Adresli: Evet

Özet

To coat CuO thin films on the glass surface, an easily controlled successive ionic layer absorption and reaction method was used. CuO thin films were grown at room temperature. The CuO thin films obtained were annealed for 30 min at 200, 300 and 400 degrees C. The changes caused by annealing temperature on nanostructured CuO thin films were studied. Structural, morphological, optical and molecular properties of annealed CuO thin films were investigated. For this analysis, X-ray diffraction, Scanning electron microscopy, Atomic force microscopy, RAMAN and Optical absorption spectroscopy (UV-Vis) and Fourier transform infrared spectroscopy devices were used. Graphic