The Effects of Sample Temperature and Termal Annealıng on Characterıstıc Parameters of Au/n-Inp/In Schottky Diodes Determıned from Current-Voltage Measurements

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CİMİLLİ ÇATIR F. E., Sağlam M., Türüt A.

IPCAP 2016, Erzurum, Turkey, 25 - 27 February 2016, pp.203, (Full Text)

  • Publication Type: Conference Paper / Full Text
  • City: Erzurum
  • Country: Turkey
  • Page Numbers: pp.203
  • Erzincan Binali Yildirim University Affiliated: Yes

Abstract

The Au/n-Inp/In Schottky diodes fabricated using n-type InP (100) wafer. The current-voltage (I-V) characteristics were measured before and after annealing the sample at 400oC for 3 min. The values of the barrier height obtained from I-V measurements for as-deposited Au/n-InP/In Schottky diodes vary from 0.517, eV (300 K) to 0.128, (10 K), and the ideality factors vary from, 1.016, (300 K) to, 11.898, 9 (10 K). However, the barrier hight values of the annealed (at 400oC) Au/n-InP/In Schottky diodes vary from, 0.570 eV (300 K) to 0.034, eV (10 K) while the ideality factors vary from 1.008 (300 K) to 3.150 (10 K). Because of accompanying two different mean barrier height values to the Schottky diodes for the 0-150 K and 150-300 K temperature ranges, barrier height matches with the double Gaussian model of barrier height.