Akademik Veri Yönetim Sistemi
1st International Conference on Trends in Advanced Research, Konya, Türkiye, 4 - 07 Mart 2023, cilt.1, ss.488
Graphene (Gr) is of great interest in the development of new electronic, photonic, and composite
materials. The physical properties of Gr can vary depending on the number of layers, and this unique
property makes it a potential material for different electronic applications. In this study, few-layer graphene
(FLG) film was spin-coated onto the InP semiconductor surface and the FLG/n-InP Schottky contact was
produced. The properties and quality of the FLG nano-film were determined by using Raman spectroscopy.
Parameters such as ideality factor, barrier height, and series resistance of Schottky contacts were calculated
using current-voltage (I-V) curves. With the Gaussian distribution, the mean ideality factor of the Gr/InP
contacts was found to be <n>=1,47, and the mean barrier height values were found to be <φb>=0.68 eV.
The standard deviation values were calculated as σ=0.32 for the ideality factor and σ=0.06 eV for the barrier
height. In addition, the series resistance values were calculated from the Cheung functions and were found
to be in agreement with the literature. Finally, the current conduction mechanisms of the Gr/n-InP structure
were revealed by examining the logarithmic I-V characteristics.