Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodes


Cimilli F. E. , SAGLAM M., Tueruet A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.22, ss.851-854, 2007 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 22 Konu: 8
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1088/0268-1242/22/8/003
  • Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Sayfa Sayıları: ss.851-854

Özet

We have identically prepared Au/n-InP/In Schottky barrier diodes (SBDs). The barrier height for the Au/n-InP/In SBDs from the current-voltage characteristics has varied from 0.557 eV to 0.615 eV, and the ideality factor n from 1.002 to 1.087. We have determined a lateral homogeneous barrier height value of approximately 0.597 eV for the Au/n-InP/In SBD from the experimental linear relationship between barrier heights and ideality factors. The barrier height value obtained from the reverse bias C-2-V characteristics has varied from 0.512 eV to 0.572 eV and statistical analysis yields the mean Phi(C-V) = 0.562 +/- 0.004 eV. A doping density of about (2.90 +/- 0.05) x 10(15) cm(-3) has been determined from the reverse bias C-2-V characteristics.