1st International Conference on Trends in Advanced Research, Konya, Turkey, 4 - 07 March 2023, vol.1, pp.42-47
In this paper, the current-voltage (I-V) measurements of an Al/4H-SiC Schottky device are
characterized as a function of the temperature in 60-300 K temperature range. The series resistance values
are calculated to be 12.5 Ω at 300 K from Cheung functions. The experimental parameters such as the
ideality factor and apparent barrier height show resolute temperature dependent. These inhomogeneous
characteristics observed for Al/4H-SiC are related to Schottky barrier anomalities. Thus, it may be
commented that the temperature dependent electrical characteristics of an Al/4H-SiC Schottky sample can
be characterized on the basis of the thermionic emission theory.