On analysis of current-voltage characteristics in an inhomogeneous Al/4H-SiC junction structure

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Gülnahar M., Cimilli Çatır F. E.

1st International Conference on Trends in Advanced Research, Konya, Türkiye, 4 - 07 Mart 2023, cilt.1, ss.42-47

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1
  • Basıldığı Şehir: Konya
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.42-47
  • Erzincan Binali Yıldırım Üniversitesi Adresli: Evet

Özet

In this paper, the current-voltage (I-V) measurements of an Al/4H-SiC Schottky device are characterized as a function of the temperature in 60-300 K temperature range. The series resistance values are calculated to be 12.5 Ω at 300 K from Cheung functions. The experimental parameters such as the ideality factor and apparent barrier height show resolute temperature dependent. These inhomogeneous characteristics observed for Al/4H-SiC are related to Schottky barrier anomalities. Thus, it may be commented that the temperature dependent electrical characteristics of an Al/4H-SiC Schottky sample can be characterized on the basis of the thermionic emission theory.