Akademik Veri Yönetim Sistemi
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.32, sa.1, ss.611-622, 2021 (SCI-Expanded)
In this study, the reduced graphene oxide (rGO) was synthesized from graphene oxide (GO) by using chemical reduction method. The spray pyrolysis technique was used to deposit rGO film on n-InP substrate. The structural, morphological, and optical properties of rGO film were investigated by XRD, SEM, and UV-Vis spectroscopies. Au/rGO/n-InP device was fabricated and the current-voltage characteristics were examined in the temperature range of 60-300 K. The device parameters of barrier height (BH) and ideality factor are found to be strong functions of temperature due to the barrier inhomogeneities at metal-semiconductor interface. The temperature dependency of the electrical characteristics of the Au/rGO/n-InP SBD was explained by the thermionic field emission (TFE) theory with Gaussian distribution (GD) of the BH values. The BH has a GD with a mean barrier height of (phi) over bar (bo) = 0.93 eV between 120 and 300 K temperatures and (phi) over bar (bo) = 0.62 eV between 60 and 120 K temperatures. It was seen that the existing current mechanism is predominantly controlled by spacecharge-limited current (SCLC) at large forward bias according to the sample temperature. The rGO interface plays also an important role in the conduction mechanism and electronic properties of the device.