Akademik Veri Yönetim Sistemi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, cilt.217, sa.19, 2020 (SCI-Expanded)
Ti/GO/n-InP Schottky barrier diode (SBD) is obtained by growing graphene oxide (GO) film on n/InP semiconductor using easy and economical spray pyrolysis method. The effect of GO as the interfacial layer on device performance of Ti/GO/n-InP SBD is investigated in detail. The optical absorbance spectra show that bandgap energy of the GO film is 3.57 eV. The optical transmittance value of 79.5% is in consistent with the absorbance spectra of GO film. The barrier heights (BHs) that are estimated for the Ti/GO/n-InP SBD vary from 0.263 to 0.980 eV (I-V) and 1.328 to 1.006 eV (C-V) from theI-VandC-Vmeasurements in the temperature range of 100-400 K. The contradiction between the BHs from theI-VandC-Vcharacteristics is discussed. The mean BH values are found to be phi(b01) = 0.98 eV (250-400 K) and phi(b02) = 0.73 eV (100-250 K) from the phi(b0)-1/2kTplot. From the modified Richardson plots based on a Gaussian distribution of BH, phi(b01) = 0.93 (250-400 K) and phi(b02) = 0.69 eV (100-250 K) andA* is calculated to be 12.44 and 12.73 A cm(-2) K-2, respectively. TheI-V-TandC-V-Tmeasurements demonstrate that carrier transport mechanism of Ti/GO/n-InP is well explained by thermionic emission (TE) mechanism with a double Gaussian distribution of the Schottky barrier heights (SBHs).