Temperature-dependent current-voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height


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Cimilli F. E., Sağlam M., Efeoğlu H., Turut A.

PHYSICA B-CONDENSED MATTER, vol.404, pp.1558-1562, 2009 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 404
  • Publication Date: 2009
  • Doi Number: 10.1016/j.physb.2009.01.018
  • Journal Name: PHYSICA B-CONDENSED MATTER
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1558-1562
  • Keywords: Schottky barrier inhomogeneity, n-InP semiconductor, Schottky diodes, I-V CHARACTERISTICS, ELECTRICAL CHARACTERISTICS, INTERSECTING BEHAVIOR, TRANSPORT, GAAS, CONTACTS, PARAMETERS, DIFFERENCE
  • Erzincan Binali Yildirim University Affiliated: No

Abstract

The current-voltage (I-V) characteristics of Au/n-InP Schottky contacts have been measured in the temperature range of 70-300K by steps of 10K. Our data of the Au/n-InP Schottky contact strongly suggest that the temperature-dependent electron transport at the metal-semiconductor interface is significantly affected by the barrier inhomogeneity. The distribution of local effective SBHs has been modeled by a summation of existence of double Gaussian barrier heights which represents the high- and low-barrier of the full distribution in 170-300 and 70-170 K ranges. (C) 2009 Elsevier B.V. All rights reserved.