Fabrication and Characterization of NiSe2 Films Prepared by SILAR Method


Akaltun Y.

IEEJ Transactions on Electrical and Electronic Engineering, vol.18, no.9, pp.1414-1418, 2023 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 18 Issue: 9
  • Publication Date: 2023
  • Doi Number: 10.1002/tee.23862
  • Journal Name: IEEJ Transactions on Electrical and Electronic Engineering
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.1414-1418
  • Keywords: deposition, NiSe2, SILAR, thicknesses, thin film
  • Erzincan Binali Yildirim University Affiliated: Yes

Abstract

Nickel selenide thin films were grown on glass substrates at room temperature using the successive ionic layer adsorption and reaction (SILAR) method. Optical and structural analyses of the thin films were also performed. X-ray diffraction (XRD), energy dispersive x-ray analysis (EDAX) and scanning electron microscopy (SEM) were used for structural analysis, and UV–vis spectrometer was used for optical analysis. The XRD results indicate that the NiSe2 thin films had a polycrystalline structure. As a result of the optical analysis, the bandgap value decreased from 2.56 to 2.25 eV as the thickness increased. These results suggest that increasing film thickness improves the crystal structure of NiSe2 thin films. © 2023 Institute of Electrical Engineer of Japan and Wiley Periodicals LLC.