Fabrication and Characterization of NiSe2 Films Prepared by SILAR Method

Akaltun Y.

IEEJ Transactions on Electrical and Electronic Engineering, cilt.18, sa.9, ss.1414-1418, 2023 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 18 Sayı: 9
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1002/tee.23862
  • Dergi Adı: IEEJ Transactions on Electrical and Electronic Engineering
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.1414-1418
  • Anahtar Kelimeler: deposition, NiSe2, SILAR, thicknesses, thin film
  • Erzincan Binali Yıldırım Üniversitesi Adresli: Evet

Özet

Nickel selenide thin films were grown on glass substrates at room temperature using the successive ionic layer adsorption and reaction (SILAR) method. Optical and structural analyses of the thin films were also performed. X-ray diffraction (XRD), energy dispersive x-ray analysis (EDAX) and scanning electron microscopy (SEM) were used for structural analysis, and UV–vis spectrometer was used for optical analysis. The XRD results indicate that the NiSe2 thin films had a polycrystalline structure. As a result of the optical analysis, the bandgap value decreased from 2.56 to 2.25 eV as the thickness increased. These results suggest that increasing film thickness improves the crystal structure of NiSe2 thin films. © 2023 Institute of Electrical Engineer of Japan and Wiley Periodicals LLC.