Gamma irradiation-induced changes at the electrical characteristics of organic-based Schottky structures

Gullu, O.; Cankaya, MURAT; Biber, M.; Turut, A.

doi:10.1088/0022-3727/41/13/135103

Gamma irradiation-induced changes at the electrical characteristics of organic-based Schottky structures

Gullu O., Cankaya M., Biber M., Turut A.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.41, sa.13, 2008 (SCI-Expanded, Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 41 Sayı: 13
Basım Tarihi: 2008
Doi Numarası: 10.1088/0022-3727/41/13/135103
Dergi Adı: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Erzincan Binali Yıldırım Üniversitesi Adresli: Hayır

Özet

We have studied electrical parameters of an Al/methyl violet/p-Si Schottky device by using current-voltage and capacitance-voltage-frequency measurements under gamma irradiation at room temperature. Experimental results have shown that gamma radiation gives rise to an increase in the barrier height, the ideality factor and the interfacial state density, while the series resistance decreases by applied radiation.