The electrical characteristics of Cu/CuS/p-Si/Al structure


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Ates A., SAĞLAM M., GÜZELDİR B., YILDIRIM M. A. , Astam A.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.12, ss.1466-1471, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 12 Konu: 7
  • Basım Tarihi: 2010
  • Dergi Adı: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Sayfa Sayıları: ss.1466-1471

Özet

Cu/CuS/p-Si/Al structure formed using CuS thin film on p-Si substrate. CuS thin film has been grown with using Successive Ionic Layer Adsorption and Reaction (SILAR) method. The Cu/CuS/p-Si/Al structure has demonstrated clearly rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The characteristic parameters such as barrier height, ideality factor and series resistance of Cu/CuS/p-Si/Al structure have been calculated from the forward bias I-V and reverse bias C(-2)-V characteristics. The ideality factor and barrier height have been obtained as n=1.63 and Phi(b)=0.69 eV by applying a thermo-ionic emission theory. At high current densities in the forward direction, the series resistance effect has been observed. The values of R(s) obtained from dV/d(InI) - I and H(I) - I plots are near to each others (R(s)=340.33 square and R(s)=346.24 square, respectively). In the same way, the barrier height calculated from C(-2)-V characteristics have been varied from 0.523 to 0.601 eV. Furthermore, the density distribution of interface states of the multilayer device has been obtained from the semi-log forward bias I-V characteristics. It has been seen that the N(ss) has almost an exponential rise with bias voltage from top of the valance band toward to mid gap.