Effect of Doping Materials on the Low-Level NO Gas Sensing Properties of ZnO Thin Films

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Corlu T., Karaduman I., YILDIRIM M. A., ATEŞ A., Acar S.

JOURNAL OF ELECTRONIC MATERIALS, vol.46, no.7, pp.3995-4002, 2017 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 46 Issue: 7
  • Publication Date: 2017
  • Doi Number: 10.1007/s11664-017-5503-z
  • Journal Name: JOURNAL OF ELECTRONIC MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.3995-4002
  • Erzincan Binali Yildirim University Affiliated: Yes

Abstract

In this study, undoped, Cu-doped, and Ni-doped ZnO thin films have been successfully prepared by successive ionic layer adsorption and reaction method. The structural, compositional, and morphological properties of the thin films are characterized by x-ray diffractometer, energy dispersive x-ray analysis (EDX), and scanning electron microscopy, respectively. Doping effects on the NO gas sensing properties of these thin films were investigated depending on gas concentration and operating temperature. Cu-doped ZnO thin film exhibited a higher gas response than undoped and Ni-doped ZnO thin film at the operating temperature range. The sensor with Cu-doped ZnO thin film gave faster responses and recovery speeds than other sensors, so that is significant for the convenient application of gas sensor. The response and recovery speeds could be associated with the effective electron transfer between the Cu-doped ZnO and the NO molecules.