The comparison of Co/hematoxylin/n-Si and Co/hematoxylin/p-Si devices as rectifier for a wide range temperature


YILMAZ M., Kocyigit A., Cirak B., Kacus H., İNCEKARA Ü., AYDOĞAN Ş.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.113, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 113
  • Publication Date: 2020
  • Doi Number: 10.1016/j.mssp.2020.105039
  • Journal Name: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex
  • Keywords: Hematoxylin thin films, Co/hematoxylin/n-Si, Co/hematoxylin/p-Si, Temperature-dependent I-V characteristics, DEPENDENT CURRENT-VOLTAGE, SCHOTTKY-BARRIER DIODES, STATE ENERGY-DISTRIBUTIONS, CAPACITANCE-VOLTAGE, SERIES RESISTANCE, ELECTRICAL CHARACTERISTICS, PHOTODIODE, HEMATOXYLIN, PARAMETERS, EXTRACTION
  • Erzincan Binali Yildirim University Affiliated: Yes

Abstract

We employed hematoxylin as interfacial layer between the n- and p-type silicon substrate and cobalt (Co) metallic contact to obtain and compare Co/hematoxylin/n-Si and Co/hematoxylin/p-Si devices for a wide range temperature via current-voltage (I-V) characteristics. Furthermore, we studied structural and morphological properties of the hematoxylin thin film by x-ray diffractometer (XRD) and scanning electron microscope (SEM). The temperature range was changed from 100 K to 460 K via 20 K interval for I-V measurements. The Co/hematoxylin/n-Si and Co/hematoxylin/p-Si devices exhibited excellent rectifying behaviors for low temperatures, but rectifying ratio (RR) values decreased with increasing temperature at +/- 1 V bias. In addition, the devices showed thermal sensor or detector behavior because current values increased with increasing temperature at reverse biases. The Co/hematoxylin/p-Si device has better stability than Co/hematoxylin/n-Si device at reverse biases for the same temperature values according to stop leakage current with increasing voltage. In addition, the diode parameters such as barrier height, ideality factor and series resistance as well as interface states density were extracted from the I-V measurements and compared in details for various techniques such as thermionic emission theory, Norde and Cheung methods. The diode parameters of the both devices were affected from the temperature changes. The Co/hematoxylin/n-Si and Co/hematoxylin/p-Si devices are good candidate for rectifying and thermal sensing applications.