In this study, a simple memristor circuit using only one Voltage Differencing Current Conveyor (VDCC), two PMOS transistors and one grounded capacitor, is designed. The presented memristor exhibits electronically controllable characteristics, which are superior to its counterparts. Both the memductance value and the operating frequency can be electronically tuned through voltage sources. The proposed memristor, which occupies 42.2 mu m x 27.5 mu m area excluding the area of the capacitor, is laid by using Cadence Environment using TSMC 0.18 mu m process parameters. In addition, the proposed memristor is implemented by using discrete circuit elements on the breadboard and detailed analyses are given by changing the values of the discrete circuit elements. All results are compatible with the previous studies. (C) 2019 Elsevier GmbH. All rights reserved.