The organic methyl green (MG) has been investigated for the first time for its electronic
applications. In order to see the effect of organic MG layer on electrical characteristics of Al/
p-Si diode, Al/MG/p-Si structure has been fabricated by inexpensive and simple ‘‘drop coating’’
method. The current–voltage (I–V) and capacitance–conductance–voltage (C–G–V) characteristics
of Al/SiO2/p-Si and Al/MG/p-Si structures have been investigated. The parameters such as
ideality factor (n), barrier height (Ub), series and shunt resistance, and the density of interface
states have been investigated using current–voltage measurements, in dark and under illumination
conditions at room temperature. The n and Ub values of 1.56 and 0.81 eV for Al/SiO2/
p-Si and 1.36 and 0.80 eV for Al/MG/p-Si are calculated from the forward bias I–V characteristics.
The Ub value of the Al/SiO2/p-Si structure at room temperature is larger than that of
conventional Al/p-Si diode. It is seen that the n value of 1.36 calculated for the Al/MG/p-Si
structure is lower than most of the metal/organic compound/inorganic semiconductor devices.