Ates, A. Et Al. 2009. Characteristic properties of indium selenide thin films grown by the successive ionic layer adsorption and reaction method. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.11, no.5 , 644-648.

Ates, A., Astam, A., KUNDAKÇİ, M., & YILDIRIM, M., (2009). Characteristic properties of indium selenide thin films grown by the successive ionic layer adsorption and reaction method. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.11, no.5, 644-648.

Ates, A. Et Al. "Characteristic properties of indium selenide thin films grown by the successive ionic layer adsorption and reaction method," JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.11, no.5, 644-648, 2009

Ates, A. Et Al. "Characteristic properties of indium selenide thin films grown by the successive ionic layer adsorption and reaction method." JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.11, no.5, pp.644-648, 2009

Ates, A. Et Al. (2009) . "Characteristic properties of indium selenide thin films grown by the successive ionic layer adsorption and reaction method." JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.11, no.5, pp.644-648.

@article{article, author={A. Ates Et Al. }, title={Characteristic properties of indium selenide thin films grown by the successive ionic layer adsorption and reaction method}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, year=2009, pages={644-648} }